Degradation of oxide-passivated boron-diffused silicon

Degradation of oxide-passivated boron-diffused silicon

Recombination in oxide-passivated boron-diffused silicon is found to increase severely at room temperature. The degradation reaction leads to a 45 fold increase in emitter recombination that saturates in 120 days, irrespective of whether the samples received a forming-gas anneal. The degradation was also examined for diffusions stored at 50, 75, and 100 °C. The results indicate that the degrada...

Amorphous silicon passivated contacts for diffused junction silicon solar cells

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Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide

Room-Temperature Near-Infrared Electroluminescence from Boron-Diffused Silicon Pn-Junction Diodes

*Correspondence: Deren Yang, State Key Lab of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Zheda Road 38, Hangzhou 310027, China e-mail: [email protected] Silicon pn-junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski n-type silicon substrate. Their room-temperature near-infrared electroluminescence ...

Time-dependent diffusivity of boron in silicon oxide and oxynitride

The diffusivities of boron in silicon oxide and oxynitride have been determined from secondary ion mass spectroscopy measurements of annealed metal-oxide-silicon structures. The results clearly show a decrease in diffusivity with increasing anneal time which is approximately exponential in form. This effect implies a similar time dependence in the concentration of a secondary species, such as h...